Lecture - 40: JFET Applications


Determine gm for an n-channel JFET with characteristic curve shown in fig. 1.

Fig. 1


We select an operating region which is approximately in the middle of the curves; that is, between vGS = -0.8 V and vGS = -1.2 V; iD = 8.5mA and iD = 5.5 mA. Therefore, the transductance of the JFET is given by

Design of JFET amplifier:

To design a JFET amplifier, the Q point for the dc bias current can be determined graphically. The dc bias current at the Q point should lie between 30% and 70% of IDSS. This locates the Q point in the linear region of the characteristic curves.

The relationship between iD and vGS can be plotted on a dimensionless graph (i.e., a normalized curve) as shown in fig. 2 .

Fig. 2

The vertical axis of this graph is iD / IDSS and the horizontal axis is vGS / VP. The slope of the curve is gm.

A reasonable procedure for locating the quiescent point near the center of the linear operating region is to select IDQ ≈ IDSS / 2 and VGSQ ≈ 0.3VP. Note that this is near the midpoint of the curve. Next we select vDS ≈ VDD / 2. This gives a wide range of values for vds that keep the transistor in the pinch –off mode.

The transductance at the Q-point can be found from the slope of the curve of fig.2 and is given by


Determine g m for a JFET where IDSS = 7 mA, VP = -3.5 V and VDD = 15V. Choose a reasonable location for the Q-point.


Let us select the Q-point as given below:

The transconductance, gm, is found from the slope of the curve at the point  iD / IDSS = 0.5 and vGS / VP =0.3. Hence,

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