**Common Data :**** V _{DD} = 1.8V , L_{min} = 0.18µm, µ_{0N} = 350cm^{2}/V s, µ_{0P} = 100cm^{2}/V s,
|V_{TH} | = 0.55, t_{ox} = 3.8nm, λ = 0.07V^{−1}, χ = 0.1.**

**Common Data :**** V _{DD} = 1.8V , L_{min} = 0.18µm, µ_{0N} = 350cm^{2}/V s, µ_{0P} = 100cm^{2}/V s,
|V_{TH} | = 0.55, t_{ox} = 3.8nm, λ = 0.07V^{−1}, χ = 0.1.**

1. Design a simple MOS current mirror of the type shown in Fig. 17 to meet the following constraints.

- Transistor must operate in the active region for values of to within from ground .
- The output current must be
- The output current must change less than 5% for change in output voltage of 0.4V

Figure 17: Figure for Question 1

Make and identical. You are to minimize the total device area within given constraints. The device area is the total gate area Assume

2. Design a voltage reference using the Beta-multiplier. Using spice simulation show the temperature performance of your design, by plotting reference voltage vs temperature.

3. Consider the circuit of Fig. 18 assuming and

- Determine such that
- If deviates from the value calculated by what is the mismatch between and
- If the circuit fed by cascode current source changes by by how much does change?

Figure 18: Figure for Question 3

4. Consider the circuit of Fig. 19 with and

- Calculate the deviation of from if is less than
- Determine the of the amplifier .

Figure 19: Figure for Question 4

5. Calculate the quiscent curent and temperature coefficient of the circuit shown in Fig.20 where and The resistor has a temperature coefficient of

Figure 20 : Figure for Question 5