Lectures in this course:40
1 - Introduction on VLSI Design (49:01)
2 - Bipolar Junction Transistor Fabrication (48:48)
3 - MOSFET Fabrication for IC (50:13)
4 - Crystal Structure of Si (50:47)
5 - Crystal Structure contd (47:57)
6 - Defects in Crystal + Crystal growth (49:17)
7 - Crystal growth Contd + Epitaxy I (50:33)
8 - Epitaxy II - Vapour phase Epitaxy (52:33)
9 - Epitaxy III - Doping during Epitaxy (43:02)
10 - Molecular beam Epitaxy (48:21)
11 - Oxidation I - Kinetics of Oxidation (51:46)
12 - Oxidation II Oxidation rate constants (51:42)
13 - Oxidation III - Dopant Redistribution (50:37)
14 - Oxidation IV - Oxide Charges (44:14)
15 - Diffusion I - Theory of Diffusion (53:50)
16 - Diffusion II - Infinite Source (42:53)
17 - Diffusion III - Actual Doping Profiles (52:10)
18 - Diffusion IV Diffusion Systems (54:30)
19 - Ion - Implantation Process (54:54)
20 - Ion - Implantation Process (51:25)
21 - Annealing of Damages (51:48)
22 - Masking during Implantation (53:02)
23 - Lithography - I (52:43)
24 - Lithography - II (38:55)
25 - Wet Chemical Etching (54:10)
26 - Dry Etching (52:03)
27 - Plasma Etching Systems (51:59)
28 - Etching of Si,Sio2,SiN and other materials (52:10)
29 - Plasma Deposition Process (50:49)
30 - Metallization - I (50:44)
31 - Problems in Aluminium Metal contacts (49:00)
32 - IC BJT - From junction isolation to LOCOS (41:45)
33 - Problems in LOCOS + Trench isolation (54:34)
34 - More about BJT Fabrication and Realization (51:04)
35 - Circuits + Transistors in ECL Circuits (48:04)
36 - MOSFET I - Metal gate vs. Self-aligned Poly-gate (56:36)
37 - MOSFET II Tailoring of Device Parameters (51:20)
38 - CMOS Technology (50:06)
39 - Latch - up in CMOS (40:36)
40 - BICMOS Technology (44:16)

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