Lectures in this course:41
1 - Introduction to Basic concepts (56:46)
2 - Requirements for high speed circuits, devices and materials (57:40)
3 - Classification and properties of semiconductor devices (57:15)
4 - Ternary compound semiconductors and their applications (56:53)
5 - Ternary compound semiconductors and their applications(contd.) (57:25)
6 - Crystal structures in GaAs (57:15)
7 - Dopants and impurities in GaAs and InP (57:31)
8 - Brief Overview of GaAs Technology for High Speed Devices (57:24)
9 - Epitaxial Techniques for GaAs and high speed devices (57:09)
10 - MBE and LPE for GaAs Epitoxy (57:29)
11 - GaAs and InP devices for Microelectronics (57:18)
12 - Metal Semiconductor contacts for MESFET (56:56)
13 - Metal Semiconductor contacts for MESFET(contd) (57:58)
14 - Metal Semiconductor contacts for MESFET(Contd) (57:52)
15 - Ohmic contacts on semiconductors (57:47)
16 - Fermi level pinning, I V characteristics of Schottky Barrier Diodes (57:13)
17 - Schottky Barrier Diodes I V characteristics of Non idealities -1 (57:24)
18 - Schottky Barrier Diodes I V characteristics of Non idealities -1 (55:38)
19 - Causes of Non idealities in the Schottky Barrier Diodes (I V characteristics) (57:17)
20 - MESFET operations and I V characteristics (57:23)
21 - MESFET I V characteristics Shockley's Model (56:15)
22 - MESFET Shockley's Model and velocity saturation effect (57:37)
23 - MESFET velocity saturation effect on drain current saturation (57:13)
24 - MESFET : Drain current saturation Ids due to velocity saturation (57:09)
25 - MESFET : Effects of channel length and gate length on IDS and gm (57:27)
26 - MESFET : Effects of velocity saturation and velocity field characteristics (57:36)
27 - MESFET : Effects of velocity field characteristics - Overshoot effects (56:52)
28 - MESFET : Velocity overshoot effect and self aligned MESFET SAINT (57:20)
29 - Self Aligned MESFET SAINT Threshold Voltage and Sub Threshold current (57:04)
30 - Hetero junctions (56:29)
31 - Hetero junctions and high electron Mobility Transistor(HEMT) (55:54)
32 - Hetero junctions and high electron Mobility Transistor(HEMT) (Contd.) (57:25)
33 - High Electron Mobility Transistor (57:25)
34 - HEMT off voltage, I-V characteristics and trans conductance (57:24)
35 - I-V characteristics and trans conductance and optimization (57:24)
36 - Indium phosphide based HEMT (57:24)
37 - Pseudomorphic HEMT and Hetrojunction Bipolar Transistors (55:01)
38 - Hetero junction Bipolar Transistors (HBT) (54:55)
39 - Hetero junction Bipolar Transistors (HBT) (Contd.) (56:40)
40 - Hetero junction Bipolar Transistors (HBT) (Contd.) (56:40)
41 - Hetero junction Bipolar Transistors(HBT)-4(Contd) (56:08)

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