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Course Co-ordinated by IISc Bangalore
Coordinators
 
Dr. Navakanta Bhat
IISc Bangalore

 
Dr. S.A. Shivashankar
IISc Bangalore

 
Prof. K.N. Bhat
IISc Bangalore

 

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Untitled Document
 

The objective of this course is to present the state of the art  in the areas of  semiconductor device physics and materials technology to enable the Nanoelectronics.

The fundamentals of classical CMOS technology will be discussed and the issue in scaling MOSFET in the sub-100nm regime will be elaborated. 

In this context the need for  non classical transistors with new device structure and nano materials will be elucidated. 

The issues in realizing Germanium and compound semiconductor MOSFET will be presented.

Extensive materials characterization techniques will also be discussed, which help in engineering high performance transistors.

 
 

Sl.No.

Topic(s)

Instructor

No.of Hours

1.

Overview: Nano devices, Nano materials, Nano characterization.

NB

 1

2.

Definition of Technology node, Basic CMOS Process flow.

NB

 2

3.

MOS Scaling theory, Issues in scaling MOS transistors : Short channel effects, Description of a typical 65 nm CMOS technology.

 

 3

4.

Requirements for Non classical MOS transistor.

NB

 1

5.

MOS capacitor, Role of interface quality and related process techniques, Gate oxide thickness scaling trend, SiO2 vs High-k gate dielectrics. Integration issues of high-k .
Interface states, bulk charge, band offset, stability, reliability - Qbd high field, possible candidates, CV and IV techniques.

NB

 5

6.

Metal gate transistor : Motivation, requirements, Integration Issues.

NB

2

7.

Transport in Nano MOSFET, velocity saturation, ballistic transport, injection velocity, velocity overshoot.

KNB

2

8.

SOI - PDSOI and FDSOI.

KNB

1

9.

Ultrathin body SOI - double gate transistors, integration issues.

KNB

2

10.

Vertical transistors - FinFET and Surround gate FET.

KNB

1

11.

Metal source/drain junctions - Properties of schotky junctions on Silicon, Germanium and compound semiconductors -Workfunction pinning.

KNB

2

12.

Germanium Nano MOSFETs : strain , quantization , Advantages of Germanium over Silicon , PMOS versus NMOS.
Compound semiconductors - material properties, MESFETs Compound semicocnductors MOSFETs  in the context of  channel quantization and strain , Hetero structure MOSFETs exploiting novel materials, strain, quantization.

KNB
KNB

5

13.

Synthesis of Nanomaterials :
CVD, Nucleation and Growth, ALD, Epitaxy, MBE.

SAS

4

14.

Compound semiconductor hetero-structure growth and characterization : Quantum wells and

SAS

2

15.

Thickness measurement techniques:
Contact - step height, Optical - reflectance and ellipsometry.
AFM.

SAS

1

16.

Characterization techniques for nanomaterials: FTIR, XRD, AFM, SEM, TEM, EDAX etc.
Applications and interpretation of results.

SAS

4

17.

Emerging nano materials :  Nanotubes, nanorods and other nano structures, LB technique, Soft lithography etc.
Microwave assisted synthesis, Self assembly etc.

SAS

2

 

Total

 

40

  1. Basic understanding of semiconductor devices.


  1. Fundamentals of Modern VLSI Devices, Y. Taur and T. Ning, Cambridge University Press.

  2. Silicon VLSI Technology, Plummer, Deal , Griffin , Pearson Education India.

  3. Encyclopedia of Materials Characterization, Edited by: Brundle, C.Richard; Evans, Charles A. Jr.; Wilson, Shaun ; Elsevier.




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